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ir igbt IRGB4630DPBF irgib4630dpbf irgp4630d(-e)pbf irgs4630dpbf base part number package type standard pack orderable part number form quantity IRGB4630DPBF to-220ab tube 50 IRGB4630DPBF irgp4630dpbf to-247ac tube 25 irgp4630dpbf irgp4630d-epbf to-247ad tube 25 irgp4630d-epbf tube 50 irgs4630dpbf irgs4630dpbf d 2 pak tape and reel right 800 irgs4630dtrrpbf tape and reel left 800 irgs4630dtrlpbf irgib4630dpbf to-220ab full-pak tube 50 irgib4630dpbf v ces = 600v i c = 30a, t c =100c t sc 5s, t j(max) = 175c v ce(on) typ. = 1.65v @ i c = 18a applications ? industrial motor drive ? inverters ? ups ? welding features benefits low v ce(on) and switching losses high efficiency in a wide range of applications and switching frequencies square rbsoa and maximum junction temperature 175c improved reliability due to rugged hard switching performance and high power capability positive v ce (on) temperature coefficient and tight distribution of parameters excellent current sharing in parallel operation 5s short circuit soa enables short circuit protection scheme lead-free, rohs compliant environmentally friendly insulated gate bipolar transistor with ultrafast soft recovery diode g c e gate collector emitter irgp4630dpbf to-247ac e g n-channel c irgs4630dpbf d 2 pak irgib4630dpbf to-220ab full-pak c e g c c c e g irgp4630d-epbf to-247ad c e g c IRGB4630DPBF to-220ab c e c g e c g 1 2015-11-23
irgb/ib/p/s4630d/epbf 2 2015-11-23 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current ? 47 a i c @ t c = 100c continuous collector current ? 30 i cm pulse collector current, v ge =15v ? 54 i lm clamped inductive load current, v ge =20v ? 72 i f @ t c = 25c diode continuous forward current ? 30 i f @ t c = 100c diode continuous forward current ? 18 v ge continuous gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 206 w p d @ t c = 100c maximum power dissipation 103 t j operating junction and -40 to +175 c t stg storage temperature range soldering temperature, for 10 sec. (1.6mm from case) 300 mounting torque, 6-32 or m3 screw (to-220, to-247) 10 lbfin (1.1 nm) i fm diode maximum forward current ? 72 transient gate to emitter voltage 30 thermal resistance parameter min. typ. max. units r jc (igbt) ? thermal resistance junction-to-case (d 2 pak, to-220) ??? ??? 0.73 c/w r cs thermal resistance, case-to-sink (flat, greased surface-to-220, d 2 pak, to-220 full-pak ) ??? 0.5 ??? r ja thermal resistance, junction-to-ambient (pcb mount - d 2 pak) ? ??? ??? 40 r jc (diode) ? thermal resistance junction-to-case (d 2 pak, to-220) ??? ??? 2.0 thermal resistance junction-to-case (to-247) ??? ??? 0.78 thermal resistance junction-to-case (to-247) ??? ??? 2.1 thermal resistance, junction-to-ambient (socket mount ?to-220) ??? ??? 62 thermal resistance, junction-to-ambient (socket mount ?to-247) ??? ??? 40 thermal resistance junction-to-case (to-220 full-pak) ??? ??? 3.4 thermal resistance junction-to-case (to-220 full-pak) ??? ??? 4.6 thermal resistance case-to-sink (to-247) ??? 0.24 ??? thermal resistance, junction-to-ambient (socket mount ?to-220 full-pak) ??? ??? 65 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 100a ? v (br)ces / t j temperature coeff. of breakdown voltage ? 0.40 ? v/c v ge = 0v, i c = 1ma (25c-175c) v ce(on) collector-to-emitter saturation voltage ? 1.65 1.95 i c = 18a, v ge = 15v, t j = 25c ? 2.05 ? i c = 18a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 500a v ge(th) / t j threshold voltage temp. coefficient ? -18 ? mv/c v ce = v ge , i c = 1.0ma (25c-175c) gfe forward transconductance ? 12 ? s v ce = 50v, i c = 18a, pw = 80s i ces collector-to-emitter leakage current ? 2.0 25 a v ge = 0v, v ce = 600v ? 550 ? v ge = 0v, v ce = 600v, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v v fm diode forward voltage drop ? 2.3 3.3 v i f = 18a ? 1.6 ? i f = 18a, t j = 175c ? 2.15 ? i c = 18a, v ge = 15v, t j = 175c v
irgb/ib/p/s4630d/epbf 3 2015-11-23 switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max units conditions q g total gate charge ? 35 ? nc i c = 18a q ge gate-to-emitter charge ? 10 ? v ge = 15v q gc gate-to-collector charge ? 15 ? v cc = 400v e on turn-on switching loss ? 95 ? j i c = 18a, v cc = 400v, v ge =15v r g = 22 , l = 200h, l s = 150nh, t j = 25c energy losses include tail & diode reverse recovery ? e off turn-off switching loss ? 350 ? e total total switching loss ? 445 ? t d(on) turn-on delay time ? 40 ? ns t r rise time ? 25 ? t d(off) turn-off delay time ? 105 ? t f fall time ? 25 ? e on turn-on switching loss ? 285 ? j i c = 18a, v cc = 400v, v ge =15v r g = 22 , l = 200h, l s = 150nh, t j = 175c energy losses include tail & diode reverse recovery ? e off turn-off switching loss ? 570 ? e total total switching loss ? 855 ? t d(on) turn-on delay time ? 40 ? ns t r rise time ? 25 ? t d(off) turn-off delay time ? 120 ? t f fall time ? 40 ? c ies input capacitance ? 1040 ? v ge = 0v c oes output capacitance ? 87 ? pf v cc = 30v c res reverse transfer capacitance ? 32 ? f = 1.0mhz rbsoa reverse bias safe operating area t j = 175c, i c = 72a full square v cc = 480v, vp 600v r g = 22 ? , v ge = +20v to 0v scsoa short circuit safe operating area 5.0 ? ? s v cc = 400v, vp 600v r g = 22 ? , v ge = +15v to 0v erec reverse recovery energy of the diode ? 260 ? j t j = 175c t rr diode reverse recovery time ? 100 ? ns v cc = 400v, i f = 18a, v ge = 15v, i rr peak reverse recovery current ? 23 ? a rg = 22 , l = 200h, l s = 150nh notes: ? limited by maximum junction temperature. not applic able for full-pak package: current value limited by r jc. ? r is measured at t j of approximately 90c. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? pulse width limited by maximum junction temperature. ? values influenced by parasitic l and c in measurement. ? when mounted on 1? square pcb (fr-4 or g-10 material). for re commended footprint and soldering techniques refer to application note #an-994. http://www.irf.com/technical-info/appnotes/an-994.pdf ? v cc = 80% (v ces ), v ge = 20v, l = 100h, r g = 22 ? .
irgb/ib/p/s4630d/epbf 4 2015-11-23 25 50 75 100 125 150 175 t c (c) 0 10 20 30 40 50 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 i c ( a ) 1msec 10sec 100sec tc = 25c tj = 175c single pulse dc fig. 1 - maximum dc collector current vs. case temperature 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 i c ( a ) fig. 2 - power dissipation vs. case temperature 0 1 2 3 4 5 6 7 8 v ce (v) 0 10 20 30 40 50 60 70 80 90 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v fig. 4 - reverse bias soa t j = 175c; v ge = 20v fig. 3 - forward soa t c = 25c; t j 175c; v ge = 15v 0 1 2 3 4 5 6 7 8 v ce (v) 0 10 20 30 40 50 60 70 80 90 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s
irgb/ib/p/s4630d/epbf 5 2015-11-23 0.0 1.0 2.0 3.0 4.0 5.0 v f (v) 0 20 40 60 80 100 i f ( a ) -40c 25c 175c 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 9.0a i ce = 18a i ce = 36a fig. 8 - typ. diode forward voltage drop characteristics 0 1 2 3 4 5 6 7 8 v ce (v) 0 10 20 30 40 50 60 70 80 90 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 9.0a i ce = 18a i ce = 36a fig. 7 - typ. igbt output characteristics t j = 175c; tp = 80s 51 01 52 0 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 9.0a i ce = 18a i ce = 36a fig. 9 - typical v ce vs. v ge t j = -40c 0 5 10 15 20 v ge (v) 0 20 40 60 80 100 120 140 160 180 i c e ( a ) t j = 25c t j = 175c fig. 10 - typical v ce vs. v ge t j = 25c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 10s fig. 11 - typical v ce vs. v ge t j = 175c
irgb/ib/p/s4630d/epbf 6 2015-11-23 0 10 20 30 40 i f (a) 0 5 10 15 20 25 30 35 i r r ( a ) r g = 10 r g = 22 r g = 47 r g = 100 5 10152025303540 i c (a) 0 200 400 600 800 1000 1200 1400 e n e r g y ( j ) e off e on 0255075100125 rg ( ) 0 100 200 300 400 500 600 700 800 900 e n e r g y ( j ) e off e on fig. 16 - typ. energy loss vs. r g t j = 175c; l = 200h; v ce = 400v, i ce = 18a; v ge = 15v fig. 14 - typ. energy loss vs. i c t j = 175c; l = 200h; v ce = 400v, r g = 22 ; v ge = 15v 0 25 50 75 100 125 r g ( ) 0 5 10 15 20 25 30 35 40 i r r ( a ) fig. 18 - typ. diode i rr vs. i f t j = 175c fig. 19 - typ. diode i rr vs. r g t j = 175c 5 10 15 20 25 30 35 40 45 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 r g ( ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 17 - typ. switching time vs. r g t j = 175c; l = 200h; v ce = 400v, i ce = 18a; v ge = 15v fig. 15 - typ. switching time vs. i c t j = 175c; l = 200h; v ce = 400v, r g = 22 ; v ge = 15v
irgb/ib/p/s4630d/epbf 7 2015-11-23 0 500 1000 1500 di f /dt (a/s) 400 600 800 1000 1200 1400 1600 q r r ( c ) 10 22 100 47 18a 36a 9.0a 8 1012141618 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 t i m e ( s ) 20 30 40 50 60 70 80 90 100 110 120 c u r r e n t ( a ) fig. 21 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c 0 10 20 30 40 i f (a) 0 50 100 150 200 250 300 350 400 e n e r g y ( j ) r g = 10 r g = 22 r g = 47 r g = 100 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 22 - typ. diode e rr vs. i f t j = 175c 0 500 1000 1500 di f /dt ( a/s) 0 5 10 15 20 25 30 35 40 i r r ( a ) fig. 20 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 18a; t j = 175c 0 5 10 15 20 25 30 35 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 300v v ces = 400v fig. 23 - v ge vs. short circuit time v cc = 400v; t c = 25c fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 25 - typical gate charge vs. v ge i ce = 18a; l = 600h
irgb/ib/p/s4630d/epbf 8 2015-11-23 fig. 26 - maximum transient thermal impedance, junction-to-case (igbt-to-220pak) fig. 27 - maximum transient thermal impedance, junction-to-case (diode- to-220pak) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c c ci= i / ri ci= i / ri ri (c/w) i (sec) 0.244 0.000084 1.102 0.001770 0.655 0.013544 j j 1 1 2 2 r 1 r 1 r 2 r 2 c c ci = i / ri ci= i / ri ri (c/w) i (sec) 0.3193 0.000273 0.4104 0.004525
irgb/ib/p/s4630d/epbf 9 2015-11-23 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - dc 4x dut vcc r sh l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm g force c sense 100k dut 0.0075f d1 22k e force c force e sense
irgb/ib/p/s4630d/epbf 10 2015-11-23 fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 150c using fig. ct.3 fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 -5 0 5 10 15 20 25 30 -100 0 100 200 300 400 500 600 -5.70 -5.20 -4.70 -4.20 i ce (a) v ce (v) time ( s ) e off loss 5% v ce 5% i ce 90% i ce tf -10 0 10 20 30 40 50 60 -100 0 100 200 300 400 500 600 -0.15 0.05 0.25 i ce (a) v ce (v) time (s) e on test 90% test 10% test current 5% v ce tr -40 -30 -20 -10 0 10 20 30 -0.05 0.05 0.15 i rr (a) time (s) peak i rr q rr t rr 10% peak i rr -50 0 50 100 150 200 250 -100 0 100 200 300 400 500 -5.00 0.00 5.00 10.00 i ce (a) v ce (v) time (s) v ce i ce
irgb/ib/p/s4630d/epbf 11 2015-11-23 lot code 1789 exam ple: th is is an irf1010 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 in t e r n a t io n a l part num ber r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code week 19 lin e c to-220ab package is not recommended for surface mount application. to-220ab part marking information to-220ab package outline (dimensions are shown in millimeters (inches))
irgb/ib/p/s4630d/epbf 12 2015-11-23 to-220ab full-pak package is not recommended for surface mount application. to-220ab full? pak part marking information to-220ab full? pak package outline (dimensions are shown in millimeters (inches))
irgb/ib/p/s4630d/epbf 13 2015-11-23 to-247ac package outline dimensions are shown in millimeters (inches) year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information to-247ac package is not recommended for surface mount application.
irgb/ib/p/s4630d/epbf 14 2015-11-23 to-247ad package outline dimensions are shown in millimeters (inches) assem bly year 0 = 2000 assem bled o n w w 35, 2000 in the assem bly line "h" exam ple: this is an irg p30b120kd-e lo t co de 5657 with assembly part number date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lot code n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free" to-247ad part marking information to-247ad package is not recommended for surface mount application.
irgb/ib/p/s4630d/epbf 15 2015-11-23 d 2 -pak (to-263ab) package outline dimensions are shown in millimeters (inches) d 2 -pak (to-263ab) part marking information date code year 0 = 2000 week 02 a = assembly site code rectifier international part number p = designates lead - free product (optional) f530s in the assembly line "l" assembled on ww 02, 2000 this is an irf530s with lot code 8024 international logo rectifier lot code assembly year 0 = 2000 part number date code line l week 02 or f530s logo assembly lot code
irgb/ib/p/s4630d/epbf 16 2015-11-23 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak tape & reel information (dimensions are shown in millimeters (inches))
irgb/ib/p/s4630d/epbf 17 2015-11-23 ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. qualification information ? qualification level industrial (per jedec jesd47f) ?? to-220ab to-220ab-full-pak moisture sensitivity level to-247ac to-247ad d 2 pak msl1 rohs compliant yes n/a published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a wr itten document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

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